EFFECT OF EXPOSURE OF LIGHT ON DENSITY OF DEFECT STATE IN Se96Bi4 GLASSY ALLOYS

Abstracts

Amorphous thin films of Se₉₆Bi₄ glassy alloy are prepared by vacuum evaporation technique. Space charge limited currents are measured at various fixed temperatures before and after exposure to white light of intensity 990 lux in a vacuum of 10^-2 Torr. Using the theory of space charge limited conduction (SCLC), the density of localized states (DOS) has been calculated after each exposure of light (exposure time 1 -5 hours). The results indicate that DOS increases with the time of light exposure indicating the creation of light induced defects due to exposure of light.

Keywords : Chalcogenide glasses; amorphous semiconductors; Light induced defect.

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Posted July 26, 2018 02:27